5.1 | Solid Metal Mediated Epitaxy (SMME)

Consistent with previous SMME work on Si(111)[1], an investigation is conducted using the existing equipment (Appendix B). An original SMME investigation is performed on Si(100). An explanation of the current analysis is based upon past experiments[2] of Al deposited on Si(100).

A mixture of reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) is utilized to analyze several characteristics of the deposited films and a closer investigation of the process is pursued. Reported substrate temperature values are the pyrometer equivalents considered more accurate than their measured thermocouple counterparts.

This first section, and its associated subsections form the foundation for the core research, SMM-SOI, results of which are presented in section 5.2.

References

  1. M. - A. Hasan, Sundgren, J. E., and Greene, J. E., “Epitaxial Growth of Si(111) at Buried Interfaces Using Solid-Metal Mediated Molecular Beam Epitaxy”, in 1996 MRS Spring Meeting, San Francisco, CA, 1996.
  2. M. - A. Hasan, Radnoczi, G., Sundgren, J. E., and Hansson, G. V., “Epitaxial growth of Al on Si by thermal evaporation in ultra-high vacuum: growth on Si(100)2x1 single and double domain surfaces at room temperature”, Surface Science, vol. 236, 1990.