1.4.2 Si(111) Surface Reconstruction
1.4.3 Si(100) Surface Reconstruction
CHAPTER 2: SOLID METAL MEDIATED EPITAXY
2.1 Overview
2.2.1 Liquid Metal Mediated (LMM) Epitaxy
2.2.2 Solid Phase Epitaxy (SPE)
2.4.1 Idealized Solution of Diffusion Equation
2.4.2 Numerical Considerations
2.5 Atomistic Growth Model
CHAPTER 3: SILICON ON INSULATOR
3.1 SMM-SOI Predecessors
3.1.1 Solid Phase Epitaxy
3.1.2 Oxygen Implantation
3.1.3 Wafer Bonding
3.2 SMM-SOI
3.2.1 Ideal Growth Model
CHAPTER 4: EXPERIMENT
4.1 Overview
4.2 Wafer Preparation
4.2.1 Oxidation
4.2.2 Photolithography
4.2.3 Oxide Etch
4.2.4 UV/Ozone Cleaning
4.3 Deposition Preparations
4.3.1 Chamber and Component Preparations
4.3.2 Final Wafer Cleaning
4.4 Epitaxial Deposition
4.4.1 Deposition of Aluminum Mediator
4.4.2 Deposition of Silicon Diffiusor
4.5 Substrate Heater/Holder Assembly
4.6 Temperature Calibration
CHAPTER 5: GENERAL ANALYSIS
5.1 Solid Metal Mediated Epitaxy (SMME)
5.1.1 SI(111)
5.1.2 Si(100)
5.2 SMM-SOI
5.2.1 Oxide Pattern Verification
5.2.2 SMM-SOI Si(111)
5.2.3 SMM-SOI Si(100)
5.3 TEM Investigation of SMM-SOI Si(100)
5.4 Al Island Formation on SMM-SOI
5.4.1 SMM-SOI Process Investigation
CHAPTER 6: DISCUSSION
6.1 Solid Metal Mediated Silicon on Insulator
6.1.1 SMME on Unpatterned SI(100) & Si(111)
6.1.2 SMM-SOI: SMME on Oxide-Patterned Si(100) & Si(111)
6.1.3 Lateral Si Diffusion
6.2 Conclusions
APPENDIX A: MATHEMATICAL FORMULATION
A.1 Superposition of Solutions
A.2 Inverse Fourier Transform
A.3 \int_0^\infty e^{-x^2}dx
A.4 erf(x)
APPENDIX B: ONSIDE FACILITIES
B.1 Clean Room Facilities
B.1.1 Thermal Oxidation Furnace
B.1.2 Photolithography
B.1.3 Reactive Ion Etch
B.1.4 Additional Wafer Preparation Facilities
B.2 Scanning Electron Microscope
B.3 High Resolution Optical Microscope
B.4 MBE System
B.4.1 Deposition Chamber
B.4.2 Analysis and Preparation Chamber
B.4.3 Load Lock Entry Chamber
B.5 TEM Facilities
APPENDIX C: ELECTRON DIFFRACTION PATTERNS