In the course of this research it has been shown that SMM-SOI can provide epitaxial lateral overgrowth of crystalline silicon at low fabrication temperatures ($250 - 500^\circ \textrm{C}$). This process can be used for fabricating p-type device layers and Al metal contacts in a single fabrication step, both on oxide, and on potentially any surface where Al can be grown as a single crystal or a polycrystalline thin film.

Despite the formation of Al islands and film separation, many interesting phenomena have been explored in the course of this research that should prove useful to future investigations. Future investigations should include greater Al mediator film thickness -- enough to fully exceed the oxide height. Equally important, such investigations should be performed with better wafer cleaning and handling methods to provide a suitable substrate for SMM-SOI. As well, the basic growth models should prove to be valuable tools in any future investigation.